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  • 03-Diode Equivalent Circuits

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    Patrick Teodoro
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    The document discusses diode circuits and their equivalent models. It describes how a diode is made of P-type and N-type semiconductor materials that form a PN junction. It explains that a diode allows current to flow easily in one direction but blocks it in the other. The document presents different diode circuit models with increasing accuracy: the ideal model treats a diode as a perfect switch; the practical model adds a voltage drop; the complete model includes resistance. It also discusses diode configurations under DC bias and their analysis using node voltage and branch current equations.

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    The document discusses diode circuits and their equivalent models. It describes how a diode is made of P-type and N-type semiconductor materials that form a PN junction. It explains that a diode allows current to flow easily in one direction but blocks it in the other. The document presents different diode circuit models with increasing accuracy: the ideal model treats a diode as a perfect switch; the practical model adds a voltage drop; the complete model includes resistance. It also discusses diode configurations under DC bias and their analysis using node voltage and branch current equations.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    446 views32 pages

    03-Diode Equivalent Circuits

    Uploaded by

    Patrick Teodoro
    The document discusses diode circuits and their equivalent models. It describes how a diode is made of P-type and N-type semiconductor materials that form a PN junction. It explains that a diode allows current to flow easily in one direction but blocks it in the other. The document presents different diode circuit models with increasing accuracy: the ideal model treats a diode as a perfect switch; the practical model adds a voltage drop; the complete model includes resistance. It also discusses diode configurations under DC bias and their analysis using node voltage and branch current equations.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 32

    Diode Equivalent

    Circuits
    Diode
    • Made from a small piece of semiconductor material usually silicon, in
    which half is doped as a P-region and half is doped as an N-region
    with a PN junction and depletion region in between.

    • The P region is called anode


    • P-Type material

    • The N region is called cathode


    • N-Type material
    PN Junction
    • A p–n junction is a boundary or interface between two types of
    semiconductor materials, p-type and n-type, inside a single crystal of
    semiconductor.
    • The boundary between two different types of semiconductive
    materials.
    • A PN-junction is formed when an N-type material is fused together
    with a P-type material creating a semiconductor diode
    Depletion Region
    • A region around the PN junction where no current carriers exist
    • Also called the insulation region
    Bias
    • Current or voltage applied to a semiconductor component to turn it
    on or off

    • Zero Bias – no external voltage potential is applied to the PN


    junction diode
    • Forward Bias – connection wherein the P-region is connected to
    positive terminal of the source
    • Reverse Bias – connection wherein the N-region is connected to
    positive terminal of the source
    No Applied Bias
    • When there is no voltage
    applied across the PN junction,
    the potential developed across
    the junction is 0.3 volts at 25
    degrees C for germanium PN
    junction and 0.7 volts at 25
    degrees C for silicon PN junction
    Forward Biased PN Junction
    Forward Biased PN Junction
    • A negative voltage is applied to the N-type material and a
    positive voltage is applied to the P-type material. If this
    external voltage becomes greater than the value of the
    potential barrier, 0.7 volts for silicon and 0.3 volts for
    germanium, the potential barriers opposition will be
    overcome and current will start to flow.
    • The application of a forward biasing voltage on the junction
    diode results in the depletion layer becoming very thin and
    narrow which represents a low impedance path through the
    junction thereby allowing high currents to flow. The point at
    which this sudden increase in current takes place is
    represented on the static I-V characteristics curve above as
    the “knee” point.
    Voltage-Current Characteristics
    • Forward Bias condition
    • When a forward-bias voltage
    is applied across a diode,
    there is current , called the
    forward current and is
    designated IF
    • As the forward-bias voltage is
    gradually increased, the
    forward current and the
    When the forward-bias voltage is increased to a value where
    voltage across the diode the voltage across the diode reaches approximately 0.7 V (Si),
    gradually increases 0.3 V (Ge) (barrier potential), the forward current
    begins to increase rapidly,
    Reverse Biased PN Junction
    Reverse Biased PN Junction
    • A positive voltage is applied to the N-type material and a
    negative voltage is applied to the P-type material.
    • The positive voltage applied to the N-type material attracts
    electrons towards the positive electrode and away from the
    junction, while the holes in the P-type end are also
    attracted away from the junction towards the negative
    electrode.
    • The net result is that the depletion layer grows wider due
    to a lack of electrons and holes and presents a high
    impedance path, almost an insulator and a high potential
    barrier is created across the junction thus preventing
    current from flowing through the semiconductor material.
    Voltage-Current Characteristics
    • Reverse Bias Condition
    • When a reverse-bias voltage is
    applied across a diode, there is
    only an extremely small reverse
    current (IR) through the pn
    junction
    • When the applied bias voltage
    is increased to a value where
    the reverse voltage across the
    diode (VR) reaches the
    breakdown value (VBR), the
    reverse current begins to
    increase rapidly.
    Voltage-Current Characteristics
    Diode Equivalent Circuits
    • Combination of elements properly chosen to best represent the
    actual terminal characteristic of the diode.

    • Piecewise Linear Model


    • The Practical Diode Model
    • Ideal diode model
    Ideal diode model
    • The ideal model of a diode is the least accurate approximation and
    can be represented by a simple switch
    • When the diode is forward-biased, it ideally acts like a closed (on)
    switch
    • When the diode is reverse-biased, it ideally acts like an open (off)
    switch
    Ideal diode model
    The Practical Diode Model
    • Includes the barrier potential
    • When the diode is forward-biased, it is equivalent to a closed switch
    in series with a small equivalent voltage source (VF) equal to the
    barrier potential (0.7 V for Si, 0.3 V for Ge) with the positive side
    toward the anode.
    • When the diode is reverse-biased, it is equivalent to an open switch
    just as in the ideal model
    The Practical Diode Model

    VF = 0.7V (Silicon)
    VF = 0.3V (Germanium)
    The Complete Diode Model
    • The most accurate approximation and includes the barrier potential,
    the small forward dynamic resistance(r’d) and the large internal
    reverse resistance (r’R)
    • When the diode is forward-biased, it acts as a closed switch in series
    with the equivalent barrier potential voltage (VB) and the small
    forward dynamic resistance (r’d)
    • When the diode is reverse-biased, it acts as an open switch in parallel
    with the large internal reverse resistance (r’R)
    The Complete Diode Model
    Series Diode Configurations with
    DC inputs
    1. Determine the status of each diode
    - in general, a diode is in the “ON” state if the current established by the applied
    sources is such that its direction matches that of the arrow in the diode symbol.
    (VD > 0.7V for Silicon and VD > 0.3V for Germanium)
    2. For each configuration, mentally replace the diodes with resistive
    elements and note the resulting current direction as established by
    the applied voltages
    3. If the diode is in the “on” state, place a 0.7V drop across the
    element, or the network can be redrawn with the VT equivalent
    Series Diode Configurations with
    DC inputs

    VR
    Equivalent Model for the “ON”
    diode
    Since E > VT; diode is “ON”

    IR Voltage across the diode VD:


    VD = VT (Turn on voltage)

    ID Voltage across resistor VR:


    VR = E - VT
    Diode Current ID:
    ID = IR = VR/R
    Node Voltages
    What is VA – VB ? 4V
    VA

    What about VB – VA ? -4V

    What is the value of VB if


    VA = 10 V ? 6 V
    VB
    Branch Current Equation

    2 Branch Current Equation is


    based on Ohm’s Law
    B
    (VA – VB) / 2 = I
    Kirchhoff Current Law

    Kirchhoff Voltage Law


    • What will be the polarity of the voltage across the
    resistor if the current direction is as follows:
    I

    + VR -
    Example

    a. Solve for VD, VR, ID


    b. Repeat with the
    diode reversed
    c. Repeat if E = 0.5V
    • An open circuit can have any voltage across its terminals, but the
    current is always 0 A
    • A short circuit has a 0 V across its terminals, but the current is limited
    only by the surrounding network
    Example

    Solve for VO and ID

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