Equivalent distributed capacitance model of oxide traps on frequency dispersion of <italic>C</italic>–<italic>V</italic> curve for MOS capacitors

Equivalent distributed capacitance model of oxide traps on frequency dispersion of C–V curve for MOS capacitors

Lu Han-Han¹, Xu Jing-Ping¹, Liu Lu^{1, †,}, Lai Pui-To^{2, ‡,}, Tang Wing-Man³

Variation of capacitance with frequency when considering only a portion of the oxide adjacent to the interface has defects. The values of the parameters used in the simulation and the experimental data in (a)–(d) are equal to those in Figs. 2–4, respectively. Thickness of the oxide with defects adjacent to the interface decreases at a step of 0.2 nm.